The very concrete way to reach the target of Energy efficiency is to turn to more efficient power electronics. Increasing power density and power conversion optimization for CO2 emission reduction are key (Yole,Ltd). For Green Power Electronics and Energy saving advanced materials are one of the Key Enabling Technologies (KETs). Si-based device performances degrade badly at high temperatures, restricting their use for high power electronics. As an alternative there is a new generation of Wide Band Gap (WBG) semiconductors that have the capability to operate at higher temperatures, switching frequencies and voltages. This characteristic not only results in less losses but enables significantly reduced volume of power components due to decreased cooling requirements and smaller passive components, contributing to overall lower system cost. WBG integration into Energy application areas will result in energy savings estimated contribution into the ClimateAction (ReportORNL/TM-2017/702 ). Two major WBG materials with this potential which already made significant advances in power electronics are SiC and GaN, covering low and mid voltage (<3kV) range.

Exceeding them are the ultra wide band gap (UWBG) semiconductors (Eg>4eV), which should bring additional advantages with ability of sustaining very high voltages with low losses for switching, high temperature operation, necessary in application for grid, data centers and trains, electrical vehicles, aircrafts and ships. Among UWBG materials Ga2O3 has become a new challenger.